Reaction paths of phosphine dissociation on silicon (001)

- Warschkow, O., Curson, N. J., Schofield, S. R., Marks, N. A., Wilson, H. F., Radny, M. W., Smith, P. V., Reusch, T. C. G., McKenzie, D. R., Simmons, M. Y.

Electronic effects of isolated halogen atoms on the Ge(001) surface

- Shah, G. A., Radny, M. W., Smith, P. V.

Spin-orbit and modified Becke-Johnson potential effects on the electronic properties of bulk Ge: a density functional theory study

- Smith, P. V., Hermanowicz, M., Shah, G. A., Radny, M. W.

Acetic acid on silicon (001): an exercise in chemical analogy

- Warschkow, O., Belcher, D. R., Radny, M. W., Schofield, S. R., Smith, P. V.

Pb chain-like structures on the clean Si(001) surface - A DFT study

- Jurczyszyn, L., Radny, M. W., Smith, P. V.

Adsorption-enhanced reactivity of the In/Si(001) system

- Radny, M. D., Smith, P. V., Jurczyszyn, L.

Electronic effects of single H atoms on Ge(001) revisited

- Shah, G. A., Radny, M. W., Smith, P. V., Schofield, S. R., Curson, N. J.

Dissociative adsorption of molecular oxygen on the Cu(001) surface: a density functional theory study

- Suleiman, I. A., Radny, M. W., Gladys, M. J., Smith, P. V., Mackie, J. C., Kennedy, E. M., Dlugogorski, B. Z.

Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)

- Radny, M. W., Shah, G. A., Schofield, S. R., Smith, P. V., Curson, N. J.

Electronic effects induced by single hydrogen atoms on the Ge(001) surface

- Radny, M. W., Shah, G. A., Smith, P. V., Schofield, S. R., Curson, N. J.

Interaction of acetone with the Si(0 0 1) surface

- Saraireh, S. A., Smith, P. V., Radny, M. W., Schofield, S. R., King, B. V.

Valence surface electronic states on Ge(001)

- Radny, M. W., Shah, G. A., Schofield, S. R., Smith, P. V., Curson, N. J.

Water on silicon (001): C defects and initial steps of surface oxidation

- Warschkow, O., Schofield, S. R., Marks, N. A., Radny, M. W., Smith, P. V., McKenzie, D. R.

Clean and metal-doped bundles of boron-carbide nanotubes: a density functional study

- Ponomarenko, O., Radny, M. W., Smith, P. V.

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)

- Reusch, T. C. G, Warschkow, O., Radny, M. W., Smith, P. V., Marks, N. A., Curson, N. J., McKenzie, D. R., Simmons, M. Y.

Single hydrogen atoms on the Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G, Warschkow, O., Marks, N. A., Wilson, H. F., Schofield, S. R., Curson, N. J., McKenzie, D. R., Simmons, M. Y.

Single P and As dopants in the Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G., Warschkow, O., Marks, N. A., Shi, H. Q., McKenzie, D. R., Schofield, S. R., Curson, N. J., Simmons, M. Y.

Towards hybrid silicon-organic molecular electronics: the stability of acetone on the Si(0 0 1) surface

- Saraireh, S. A., Schofield, S. R., Smith, P. V., Radny, M. W., King, B. V.

Binding sites for SiH₂/Si(0 0 1): a combined ab initio, tight-binding, and classical investigation

- Cereda, S., Montalenti, F., Cogoni, M., Branduardi, D., Radny, M. W., Smith, P. V., Miglio, Leo

Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C .G., Warschkow, O., Marks, N. A., Wilson, H. F., Curson, N. J., Schofield, S. R., McKenzie, D. R., Simmons, M. Y.